The paper analyses the modelling of the voltage/current characterization of Carbon Nanotubes (CNTs) based n-channel MOSFET transistors. The model includes the SPICE and the Finite Element Method (FEM) simulations having the goal to highlight the damage effect on the electrical MOSFET variables and to estimate the sensitivity response of the transistor versus the electrical resistances modelling CNTs damages. The model is able to characterize the single CNT in an n-channel MOSFET layout configuration and the macroscopic effect of damaged multiple CNTs. The performed analysis is suitable to understand the possible control of external stimuli for a self-healing or healing process of the damaged CNTs-based transistor. The paper is concluded by discussing a new measurement TC34 protocol for nanostructured MOSFET healing process procedure.
Modeling of CNT MOSFET Transistors Enabling Self-Healing and Healing Procedures
Massaro, Alessandro
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2026-01-01
Abstract
The paper analyses the modelling of the voltage/current characterization of Carbon Nanotubes (CNTs) based n-channel MOSFET transistors. The model includes the SPICE and the Finite Element Method (FEM) simulations having the goal to highlight the damage effect on the electrical MOSFET variables and to estimate the sensitivity response of the transistor versus the electrical resistances modelling CNTs damages. The model is able to characterize the single CNT in an n-channel MOSFET layout configuration and the macroscopic effect of damaged multiple CNTs. The performed analysis is suitable to understand the possible control of external stimuli for a self-healing or healing process of the damaged CNTs-based transistor. The paper is concluded by discussing a new measurement TC34 protocol for nanostructured MOSFET healing process procedure.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
